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12th Physics - Semiconductor Electronics Model Question Paper 1 8682895000 Jan-06 , 2020

Semiconductor Electronics

12th Physics - Semiconductor Electronics Model Question Paper 1

Semiconductor Electronics Model Question Paper 1

12th Standard

    Reg.No. :
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Physics

Time : 01:00:00 Hrs
Total Marks : 50
    5 x 1 = 5

  1. The zener diode is primarily used as ______.

    (a)

    Rectifier

    (b)

    Amplifier

    (c)

    Oscillator

    (d)

    Voltage regulator

  2. The principle based on which a solar cell operates is______.

    (a)

    Diffusion

    (b)

    Recombination

    (c)

    Photovoltaic action

    (d)

    Carrier flow

  3. The electrical series circuit in digital form is

    (a)

    AND

    (b)

    OR

    (c)

    NOR

    (d)

    NAND

  4. Which statement is incorrect regarding for p-n junction?

    (a)

    Donor atoms are depleted of their holes in junction

    (b)

    No net charge exists far from junction

    (c)

    Barrier potential VB is generated

    (d)

    Energy VB is to be surrounted before any charge can flow across junction

  5. The intrinsic semi-conductor has ______________.

    (a)

    A finite resistance which does not change with temperature

    (b)

    Infinite resistance which decreases with temperature

    (c)

    Finite resistance which decreases with temperature

    (d)

    Finite resistance which does not change with temperature

    6. 5 x 2 = 10

  6. Distinguish between intrinsic and extrinsic semiconductors.

  7. Draw the input and output waveform of a full wave rectifier.

  8. What is forward V-I characteristics?

  9. What is rectification?

  10. What is Breakdown voltage?

    11. 5 x 3 = 15

  11. Transistor functions as a switch. Explain.

  12. State Boolean laws. Elucidate how they are used to simplify Boolean expressions with suitable example.

  13. In a transistor connected in the common base configuration, \(\alpha\) = 0 95, IE = 1 mA. Calculate the values of IC and IB.

  14. Give the Schematic representation of valence band, conduction band, and forbidden energy gap and draw energy band structure of
    (a) Insulators
    (b) Semiconductors
    (c) Metals?

  15. What is electronics?

    16. 4 x 5 = 20

  16. In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage VEB = 600 mV, calculate the emitter-collector voltage VEC (in volts).

  17. Explain current transfer characteristics.

  18. For a BJT circuit shown, assume that the 'β' of the transistor is very large and VBE= 0.7 V. The mode of operation.

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