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12th Standard Physics Semiconductor Electronics English Medium Free Online Test One Mark questions with Answer Key 2020 - 2021

12th Standard EM

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Physics

Time : 00:20:00 Hrs
Total Marks : 20
    Answer all the questions
    20 x 1 = 20
  1. Doping a semiconductor results in

    (a)

    The decrease in mobile charge carriers

    (b)

    The change in chemical properties

    (c)

    The change in the crystal structure

    (d)

    The breaking of the covalent bond

  2. When a transistor is fully switched on, it is said to be

    (a)

    Shorted

    (b)

    Saturated

    (c)

    Cut-off

    (d)

    Open

  3. Th e electrical series circuit in digital form is

    (a)

    AND

    (b)

    OR

    (c)

    NOR

    (d)

    NAND

  4. By adding _________ impurity in intrinsic semi conductor, p type semiconductor is made. Charge of these p type semiconductoris ____________

    (a)

    Trivalent, neutral

    (b)

    Pentaralent, neutral

    (c)

    Pentavalent, positive

    (d)

    Trivalent, negative

  5. The behaviour of Ge as semi-conductor is due to width of:

    (a)

    conduction band being large

    (b)

    forbidden band being small

    (c)

    conduction band being small

    (d)

    forbidden band being small and narrow

  6. How many free electrons does a p-type semiconductor contain?

    (a)

    Many

    (b)

    None

    (c)

    only those produced

    (d)

    same number as holes by thermal energy

  7. To obtain a p-type germanium semiconductor, it must be doped with

    (a)

    Indium

    (b)

    phosphorus

    (c)

    arsenic

    (d)

    antimony

  8. Doping of a semiconductor generally changes resistivity as follows

    (a)

    increases

    (b)

    decreases

    (c)

    does not alter

    (d)

    may increase

  9. Current gain in common emitter configuration is more than 1because

    (a)

    IC < IE

    (b)

    IC < IB

    (c)

    IE > IB

    (d)

    IC> IE

  10. Zener diode is usedfor

    (a)

    rectification

    (b)

    amplification

    (c)

    producing oscillation

    (d)

    stablisation

  11. If the distance between the conduction band and valence band is leV, then this combination is

    (a)

    semiconductor

    (b)

    metal

    (c)

    insulator

    (d)

    conductor

  12. In which of the configuration of transistors the voltage gain is the highest?

    (a)

    common collector

    (b)

    common base

    (c)

    common emitter

    (d)

    same in all the three

  13. Vacant energy levels are called _________

    (a)

    valence level

    (b)

    core level

    (c)

    conduction levels

    (d)

    compound level

  14. The forbidden energy gap is largest in

    (a)

    conductor

    (b)

    metals

    (c)

    semiconductor

    (d)

    insulators

  15. When a pentavalent impurity is added to a pure semi conductor we get ___________ semiconductor.

    (a)

    N-type

    (b)

    P-type

    (c)

    A-type

    (d)

    B-type

  16. Zener breakdown is mainly due to ________

    (a)

    collision

    (b)

    breaking of covalent bonds

    (c)

    doping

    (d)

    recombination

  17. In the output characteristics, the ohmic region is called ______

    (a)

    saturation region

    (b)

    cut-off region

    (c)

    active region

    (d)

    breakdown region'

  18. If the output is high for anyone of all of the inputs then it is ___________ gate

    (a)

    a NOT

    (b)

    an AND

    (c)

    an OR

    (d)

    a NOR

  19. Ihecollector-base junction of a transistor offers _________ resistance to current

    (a)

    low

    (b)

    high

    (c)

    zero

    (d)

    moderate

  20. ln the output characteristics curve of an NPN transistor, _________ is about to be a constant near knee point.

    (a)

    IC

    (b)

    IB

    (c)

    IE

    (d)

    VCC

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