The voltage at which the diode breaks down is called the breakdown voltage

The process in which alternating voltage or alternating current is converted direct voltage or direct current is called rectification.

A graph is plotted by taking the forward bias voltage (V) along the x- axis and the current (I) through the diode along y-axis. This graph is called the forward V-I characteristics.

α = \(\frac{I_C}{I_E}\)
I_C = α I_E = 0.95 x 1 = 0.95 mA
I_E = I_B + I_C
∴ I_B = I_E - I_C = 1 - 0.95 = 0.05 mA

S.No Intrinsic semiconductor Extrinsic semiconductor (i)  A semiconductor in its pure form without impurity is called an intrinsic
semiconductor. When small amount of impurity is doped in pure semiconductors it becomes extrinsic semiconductors.
  (ii) The number of free electrons in conduction band is almost equal to number of holes in valence band. The number of free electrons and holes is never equal. (iii) Electrical conductivity is a function of temperature along. Its electrical conductivity depends upon the temperature as well as on the quantity of impurity atoms doped the structure.

V_BE =0.7V
Input junction is a forward biased.
Since,
V_BE = 0.7V
V_CE = V_BE+ V_CB
V_CB = V_CE-V_BE
To determine V_CB we find I_C
\({ I }_{ C }\cong { I }_{ C }\frac { 2-{ V }_{ BE } }{ { R }_{ 2 } } =\frac { 2-0.7 }{ 1k\Omega } \)
I_C = 1.3mA
V_CE = V_CC - I_C (R₁ + R₂)
= 10 - 1.3mA (10K + 1K)
V_CE = - 4.3 V
V_CE =-4.3V-0.7
V_CB = - 5V

(i) This gives the variation of collector current (I_C) with changes in base current (I_B) at constant collector-emitter voltage (V_CE).
(ii) It is seen that a small Ie flows even when I_B is zero. This current is called the common emitter leakage current (I_CEQ) which is due to the flow of minority charge carriers.
Forward current gain:
(i) The ratio of the change in collector current (ΔI_C) to the change in base current (ΔI_B) at constant collector-emitter voltage (V_CE) is called forward current gain(β)
\(\beta ={ \left( \frac { \triangle { I }_{ C } }{ \triangle { I }_{ B } } \right) }_{ { V }_{ CE } }\)
(ii) It is value is very high and it generally ranges from 50 to 200. It depends on the construction of the transistors and will be provided by the manufacturer.

Laws of Boolean algebra:
Complement law:

A	Y=Ā
0	Y = \(\bar { 0 } \) = 1
0	Y=\(\bar { 1 } \)=0

The complement law can be realised as Ā = A
OR laws:

A	B	Y=A+B
0	0	Y = 0 + 0 = 0
0	1	Y = 0 + 1 = 1
1	0	Y = 1 + 0 = 1
1	1	Y = 1 + 1 = 1

The OR laws can be realised as:

1st law	A+0=A
2st law	A+1=1
3st law	A+A=A
4st law	A+Ā=1

AND law:

A	B	Y=A.B
0	0	Y=0.0=0
0	1	Y=0.1=0
1	0	Y=1.0=0
1	1	Y=1.1=1

The AND laws can be realised as:

1st law	A.0=0
2st law	A.1=A
3st law	A.A=A
4st law	A.Ā=0

The Boolean operations obey the folloWing laws:
Communtative laws:
A+B =B+A
A.B =B.A
A sociate laws:
A + (B + C) = (A + B) + C
A. (B.C) = (A.B).C
D stributive laws:
A (B + C) = AB + BC
A + BC = (A + B) (A + C) 
The above laws are used to simplify complicated expressions and to simplify the logic circuitry.

(i) The transistor in saturation region acts as a closed switch while in cut-off region, it acts as an open switch.
(ii) It functions like an electronic switch that helps to turn ON or OFF a given circuit by a small control signal which keeps the transistor either in saturation region or in cut-off region.

When the input is low:
(i) When the input is low (say 0 V), the base current is zero and transistor is not properly forward biased.
(ii) It is in cut off region, As a result, the collector current is zero and correspondingly the voltage drop across R_C, also becomes nearly zero, The output voltage is high and Is equal to V_CC. 
(iii) It means that the no current flows through the transistor and it is said to be switched off. The transistor acts as an open switch.
When the input is high:
(i) When input voltage is increased to a certain high value (say +5 V), the base current (I_B) increases and in turn decreases the collector current to its maximum.
(ii) The transistor will move into the saturation region. The increase in collector current (I_C). increases the voltage drop across R_C, thereby thereby lowering the output voltage, close to zero (since V_o = V_CC -I_CR_C). It means that maximum current flows through the transistor and it is said to be switched on. 
(iii)The transistor acts as a closed switch.

(i)  It is the branch of physics incorporated with technology towards the design of circuits using transistors and microchips.
(ii) It depicts the behavior and movement of electrons in a semiconductor, vacuum, or gas.
(iii) Electronics deals with electrical circuits that involve active components such as transistors, diodes, integrated circuits, and sensors, associated with the passive components like resistors, inductors, capacitors, and transformers.

\(\beta =50 \)
\(V_{\beta E} =600 \mathrm{mV} \)
\(=0.6 \mathrm{~V} \)
\(\mathrm{V}_{\mathrm{B}} =\mathrm{V}_{\mathrm{E}}-\mathrm{V}_{\mathrm{EB}} \)
\(\mathrm{V}_{\mathrm{B}} =3-0.6 \)
\(=2.4 \mathrm{~V} \)
\(\mathrm{I}_{\mathrm{B}} =\frac{\mathrm{V}_{\mathrm{B}}}{R_B}=\frac{2.4}{60 \times 10^3}=40 \mu \mathrm{A} \)
\(\mathrm{I}_{\mathrm{C}} =\beta \mathrm{I}_{\mathrm{B}}=50 \times 40 \mu \mathrm{A} =2 \mathrm{~mA} \)
\(V_C=R_FI_C=500 \times 2 \times10^{-3}=1 V\)
\(V_{EC}=V_E-V_C\)
\(V_{EC}=V_E-V_C\)
\(V_{EC}=3-1=2V\)