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Published on: 02/09/2022
QB365 provides a detailed and simple solution for every Possible Creative Questions in Class 12 Physics Subject - Retirement and Death of a Partner, English Medium. It will help Students to get more practice questions, Students can Practice these question papers in addition to score best marks.
Download Tamil Nadu 12th Standard Physics question papers, model tests, one-mark questions, important questions, and public exam papers in PDF format. Free study materials and answer keys for TN State Board students.
Questions + Answers key
Take MCQ Physics Test1.
Reverse bias applied on a junction diode ______________.
Raises the barrier potential
Increases majority charge carrier current
Lowers the potential barrier
Increases the temperature of junction
2.
A full wave rectifier is operating at 50 Hz, 220v the fundamental frequency of ripple will be __________.
50 Hz
75 Hz
110 Hz
100 Hz
3.
A N-P-N transistor conducts when collector is _________ and emitter is ________ with respect to base.
positive, negative
positive, positive
negative, negative
negative, positive
4.
In Si-crystal, impurity donor atom have valency ________________.
2
3
4
5
5.
At 0 k temp, a N - type semi conductor ______________.
Does not haveany charge carriers
Has few holes but no free electrons
Few holes and few electrons
Has equal number of holes and electrons
6.
For a transistor \(\frac{I_C}{I_E}\) = 0.96, then CE current gain is ______________.
12
6
24
48
7.
A current gain for, a transistor working as CB amplifier is 0.90. If emitter current is 10 mA, then base current is ________________.
1mA
2 mA
0.1 mA
0.2 mA
8.
The forward based diode is ______________.
9.
Which of the following is not the advantage of PN junction diode over tube value?
Unlimited life
No warming-up time after switching
Large efficiency
Low consumption of power
10.
The behaviour of Ge as semi-conductor is due to width of ___________.
conduction band being large
forbidden band being small
conduction band being small
forbidden band being small and narrow
11.
The intrinsic semi-conductor has ______________.
A finite resistance which does not change with temperature
Infinite resistance which decreases with temperature
Finite resistance which decreases with temperature
Finite resistance which does not change with temperature
12.
Which statement is incorrect regarding for p-n junction?
Donor atoms are depleted of their holes in junction
No net charge exists far from junction
Barrier potential VB is generated
Energy VB is to be surrounted before any charge can flow across junction
13.
Why can't we physically join p-type and n-type semiconductor directly to form a p-n junction?
Inter-atomic spacing become less than 1 AO
p -type will repet N-type
There will be discontinuity for the flowing charge carriers
Semi-conducting properties will be lost
14.
By adding _________ impurity in intrinsic semi conductor, p type semiconductor is made. Charge of these p type semiconductor is ____________
Trivalent, neutral
Pentaralent, neutral
Pentavalent, positive
Trivalent, negative
15.
C, Si and Ge have same no of valence electrons. C is an insulator because energy required to take one electron out from ______________.
Si is more
C is more
Ge is more
C is less
1.
(a)
Raises the barrier potential
2.
(d)
100 Hz
3.
(b)
positive, positive
4.
(d)
5
5.
(a)
Does not haveany charge carriers
6.
\(\begin{array}{l} \beta=\frac{a}{1-\alpha} \\ \beta=\frac{0.96}{1-0.96}=24 \end{array}\)
7.
\(\begin{array}{l} \alpha=\frac{I_c}{I_{\mathrm{c}}} ; \mathrm{I}_{\mathrm{c}}=\alpha \mathrm{I}_{\mathrm{t}}=9 \mathrm{~mA} \\ \mathrm{I}_{\mathrm{B}}=\mathrm{I}_{\mathrm{t}}-\mathrm{I}_{\mathrm{c}}=10-9=1 \mathrm{~mA} \end{array}\)
8.
(a)
9.
(a)
Unlimited life
10.
(d)
forbidden band being small and narrow
11.
(c)
Finite resistance which decreases with temperature
12.
(d)
Energy VB is to be surrounted before any charge can flow across junction
13.
(c)
There will be discontinuity for the flowing charge carriers
14.
(a)
Trivalent, neutral
15.
(b)
C is more
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