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TN 12th Computer Applications வலையமைப்பு வடமிடல் Sample Question Papers Study Material - QB365 Set A

Published on: 13/10/2020
12th Standard Physics Semiconductor Electronics English Medium Free Online Test One Mark questions 2020 - 2021
Download Tamil Nadu 12th Standard Physics question papers, model tests, one-mark questions, important questions, and public exam papers in PDF format. Free study materials and answer keys for TN State Board students.
Questions + Answers key
Take MCQ Physics Test1.
For Boolean identities match the pair
(i) \(\overset { = }{ A } \) (P) Ā + \(\bar { B } \)
(ii) \(\overline { A+B } \) (Q) A.B
(iii) \(\overline { A.B } \) (R) \(\bar { A } .\bar { B } \)
(iv) A.(Ā + B) (S) A
1 - (S), 2 (P), 3 - (Q), 4 - (R)
1 - (S), 2 (R), 3 - (Q), 4 - (P)
1 - (S), 2 (Q), 3 - (P), 4 - (R)
1- (S), 2 (R), 3 - (P), 4 - (Q)
2.
The frequency of output signal of LC oscillator circuit is 100 Hz with capacitance value 0.1μF. IF value of capacitance is taken as 0.2 μF, the frequency of output signal ______.
decreases by \(\frac{1}{\sqrt2}\)
increases by \(\frac{1}{\sqrt2}\)
decreases by \(\frac12\)
increases by \(\frac12\)
3.
A light emitting diode has a voltage drop of 2v across it when 10 mA current is passed. If this LED is to be operated with 6v battery the value of limiting resistor would be ___________
400 Ω
4000 Ω
40 k Ω
300 Ω
4.
Which of the following figure represents an ideal diode characteristics?
5.
What is the output of the combination of the gates shown in the figure below?
\(A+\overline { A.B } \)
A + A.B
\((A+B).\overline { (A.B) } \)
\((A+B).\overline { (A.B) } \)
6.
In a common emitter amplifier, output resistance is 5000 Ω and input resistance is 1000 Ω. If the peak value of signal voltage is 1 mV and β =100 than the peak value of output voltage is ____________.
0.1 V
0.3 V
0.2 V
0.5 V
7.
In an N-P-N transistor circuit, the emitter, collector, and base current are respectively IE, IC, and lB. The relation between them is _____________.
IC EB
IB CE
IB > IC > IE
IB > IC > IE
8.
A sinusoidal voltage of peak value 200 volts is connected to the diode and resistor R in the circuit shown. If the diode is ideal, the r.m.s. voltage across R is ________ volt.
100
\(\frac{200}{\sqrt2}\)
200
280
9.
In the figure, the input is across A, and C output is across B and D. The output is _________________.
same as input
halfwave rectified
fullwave rectified
zero
10.
A N-P-N transistor conducts when collector is _________ and emitter is ________ with respect to base.
positive, negative
positive, positive
negative, negative
negative, positive
11.
A current gain for, a transistor working as CB amplifier is 0.90. If emitter current is 10 mA, then base current is ________________.
1mA
2 mA
0.1 mA
0.2 mA
12.
Which of the following is not the advantage of PN junction diode over tube value?
Unlimited life
No warming-up time after switching
Large efficiency
Low consumption of power
13.
The intrinsic semi-conductor has ______________.
A finite resistance which does not change with temperature
Infinite resistance which decreases with temperature
Finite resistance which decreases with temperature
Finite resistance which does not change with temperature
14.
Why can't we physically join p-type and n-type semiconductor directly to form a p-n junction?
Inter-atomic spacing become less than 1 AO
p -type will repet N-type
There will be discontinuity for the flowing charge carriers
Semi-conducting properties will be lost
15.
The output of the following circuit is 1 when the input ABC is______.
101
100
110
010
16.
If the input to the NOT gate is A = 1011, its output is ______.
0100
1000
1100
0011
17.
The specific characteristic of a common emitter amplifier is _______________.
High input resistance
Low power gain
Signal phase reversal
Low current gain
18.
The light emitted in an LED is due to ______.
Recombination of charge carriers
Reflection of light due to lens action
Amplification of light falling at the junction
Large current capacity
19.
The zener diode is primarily used as ______.
Rectifier
Amplifier
Oscillator
Voltage regulator
20.
The barrier potential of a silicon diode is approximately, ______.
0.7 V
0.3 V
2.0 V
2.2 V
1.
(d)
1- (S), 2 (R), 3 - (P), 4 - (Q)
2.
\(\mathrm{f} \propto \frac{1}{\sqrt{\mathrm{C}}} \Rightarrow \frac{\mathrm{f}_2}{\mathrm{f}_1}=\sqrt{\frac{\mathrm{C}_1}{\mathrm{C}_2}}=\sqrt{\frac{0.1}{0.2}}\)
\(\therefore \mathrm{f}_2=\frac{1}{\sqrt{2}} \mathrm{f}_1\)
3.
(a)
400 Ω
4.
(a)
5.
(a)
\(A+\overline { A.B } \)
6.
(c)
0.2 V
7.
(b)
IB CE
8.
(b)
\(\frac{200}{\sqrt2}\)
9.
(d)
zero
10.
(b)
positive, positive
11.
\(\begin{array}{l} \alpha=\frac{I_c}{I_{\mathrm{c}}} ; \mathrm{I}_{\mathrm{c}}=\alpha \mathrm{I}_{\mathrm{t}}=9 \mathrm{~mA} \\ \mathrm{I}_{\mathrm{B}}=\mathrm{I}_{\mathrm{t}}-\mathrm{I}_{\mathrm{c}}=10-9=1 \mathrm{~mA} \end{array}\)
12.
(a)
Unlimited life
13.
(c)
Finite resistance which decreases with temperature
14.
(c)
There will be discontinuity for the flowing charge carriers
15.
A = 1, B = 0, C = 1
y = A + B, y = (A + B).C
y = (1 + 0).1 ⇒ y = 1
16.
\(y=\overline{A}=\overline{1011}=0100\)
The Boolean expression for NOT gate, \(y=\bar{A}\)
17.
(c)
Signal phase reversal
18.
(a)
Recombination of charge carriers
19.
(d)
Voltage regulator
20.
(a)
0.7 V
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