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Published on: 27/05/2021
CBSE 12th Standard Physics Subject Semiconductor Electronics Materials Devices And Simple Circuits HOT Questions 2 Mark Questions With Solution 2021
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Questions + Answers key
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1.
Construct AND gate using NAND GATE and give its truth table
2.
Write the Boolean equation and truth table for the circuit shown below.What is the output when all the inputs are high?
3.
Express by a truth table the output Y for all possible inputs A and B in the circuit shown below
4.
A germanium diode is preferred to a silicon one for rectifying small voltages. Explain why?
5.
For faster action which transistor is used and why?
1.
AND Gate using NAND GATE:
| A | B | Y=A.B |
|---|---|---|
| 0 | 0 | 0 |
| 0 | 1 | 0 |
| 1 | 0 | 0 |
| 1 | 1 | 1 |
2.
The output of OR gate is A+B. Consequently, the inputs of AND gate are A+B & C Hence the Boolean equation for the given circuit is Y=(A+B).C
| A | B | C | Y'=A+B | Y=(A+B)C=Y'C |
|---|---|---|---|---|
| 0 | 0 | 0 | 0 | 0 |
| 0 | 0 | 1 | 0 | 0 |
| 0 | 1 | 0 | 1 | 0 |
| 0 | 1 | 1 | 1 | 1 |
| 1 | 0 | 0 | 1 | 0 |
| 1 | 0 | 1 | 1 | 1 |
| 1 | 1 | 0 | 1 | 0 |
| 1 | 1 | 1 | 1 | 1 |
3.
The output of the AND gate is Y = A.B consequently the input of the OR gate are A and A.B . Then the final Y = A + A.B
| A | B | Y =A.B | A | Y | Y = A +Y |
|---|---|---|---|---|---|
| 0 | 0 | 0 | 0 | 0 | 0 |
| 0 | 1 | 0 | 0 | 0 | 0 |
| 1 | 0 | 0 | 1 | 0 | 1 |
| 1 | 1 | 1 | 1 | 1 | |
4.
Because the energy gap for Ge ( Eg = 0.7 ev) is smaller than the energy gap for Si (Eg = 1.1ev ). Moreover, the germanium diode is much more open to the danger of high temperature affect than silicon at high voltage
5.
For faster action NPN Transistor is used. In an NPN transistor, current conduction is mainly by free electron, whereas in PNP type transistor. It is mainly holes Since electron are more mobile than holes we prefer NPN for faster action as well as high conduction current.
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