You are given a circuit below. Write its truth table, identify the logic operation  carried out by this circuit. Draw the logic symbol of the gate it corresponds.

3

(a)

In the circuit shown in figure, when the input voltage of the base resistance  is 10 V, V_BE is zero and V_CE is also zero. Find the values of I_B, I_C and \(\beta\) 

3

(a)

Predict the effect on the electrical properties of a silicon crystal at room temperature, if every millionth silicon atom temperature, if every millionth silicon atom is replaced by an atom of indium. Given, Concentration of silicon atoms = \(5\times { 10 }^{ 28 }{ m }^{ -3 }\) intrinsic carrier concentration = \(1.5\times { 10 }^{ 16 }{ m }^{ -3 }\) H_e = 0.135 m³/ V-s and H_h = 0.048 m³ / V-s.

3

(a)

If each diode in figure has a forward bias resistance of \(25\Omega \) and infinite resistance in reverse bias, what will be the values of the currents \(I_{ 1 },I_{ 2 },I_{ 3 } \ and \ I_{ 4 }\) ?

3

(a)

Assuming the ideal diode, draw the output waveform for the circuit given in the figure, explain the waveform.

3

(a)