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Electronics and Communication 1 Mark Creative Question Paper With Answer Key

12th Standard

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Physics

Time : 00:20:00 Hrs
Total Marks : 15

    Multiple Choice Question 

    15 x 1 = 15
  1. C, Si and Ge have same no of valence electrons. C is an insulator because energy required to take one electron out from ______________.

    (a)

    Si is more

    (b)

    C is more

    (c)

    Ge is more

    (d)

    C is less

  2. By adding _________ impurity in intrinsic semi conductor, p type semiconductor is made. Charge of these p type semiconductor is ____________

    (a)

    Trivalent, neutral

    (b)

    Pentaralent, neutral

    (c)

    Pentavalent, positive

    (d)

    Trivalent, negative

  3. Why can't we physically join p-type and n-type semiconductor directly to form a p-n junction?

    (a)

    Inter-atomic spacing become less than 1 AO

    (b)

    p -type will repet N-type

    (c)

    There will be discontinuity for the flowing charge carriers

    (d)

    Semi-conducting properties will be lost

  4. Which statement is incorrect regarding for p-n junction?

    (a)

    Donor atoms are depleted of their holes in junction

    (b)

    No net charge exists far from junction

    (c)

    Barrier potential VB is generated

    (d)

    Energy VB is to be surrounted before any charge can flow across junction

  5. The intrinsic semi-conductor has ______________.

    (a)

    A finite resistance which does not change with temperature

    (b)

    Infinite resistance which decreases with temperature

    (c)

    Finite resistance which decreases with temperature

    (d)

    Finite resistance which does not change with temperature

  6. The behaviour of Ge as semi-conductor is due to width of ___________.

    (a)

    conduction band being large

    (b)

    forbidden band being small

    (c)

    conduction band being small

    (d)

    forbidden band being small and narrow

  7. Which of the following is not the advantage of PN junction diode over tube value?

    (a)

    Unlimited life

    (b)

    No warming-up time after switching

    (c)

    Large efficiency

    (d)

    Low consumption of power

  8. The forward based diode is ______________.

    (a)

    (b)

    (c)

    (d)

  9. A current gain for, a transistor working as CB amplifier is 0.90. If emitter current is 10 mA, then base current is ________________.

    (a)

    1mA

    (b)

    2 mA

    (c)

    0.1 mA

    (d)

    0.2 mA

  10. For a transistor \(\frac{I_C}{I_E}\) = 0.96, then CE current gain is ______________.

    (a)

    12

    (b)

    6

    (c)

    24

    (d)

    48

  11. At 0 k temp, a N - type semi conductor ______________.

    (a)

    Does not haveany charge carriers

    (b)

    Has few holes but no free electrons

    (c)

    Few holes and few electrons

    (d)

    Has equal number of holes and electrons

  12. In Si-crystal, impurity donor atom have valency ________________.

    (a)

    2

    (b)

    3

    (c)

    4

    (d)

    5

  13. A N-P-N transistor conducts when collector is _________ and emitter is ________ with respect to base.

    (a)

    positive, negative

    (b)

    positive, positive

    (c)

    negative, negative

    (d)

    negative, positive

  14. A full wave rectifier is operating at 50 Hz, 220v the fundamental frequency of ripple will be __________.

    (a)

    50 Hz

    (b)

    75 Hz

    (c)

    110 Hz

    (d)

    100 Hz

  15. Reverse bias applied on a junction diode ______________.

    (a)

    Raises the barrier potential 

    (b)

    Increases majority charge carrier current

    (c)

    Lowers the potential barrier

    (d)

    Increases the temperature of junction

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